SEMICONDUCTOR. MATERIAL AND DEVICE. CHARACTERIZATION. Third Edition. DIETER K. SCHRODER. Arizona State University. Tempe, AZ. A JOHN. Library of Congress Cataloging-in-Publication Data: Schroder, Dieter K. Semiconductor material and device characterization / by Dieter K. Schroder. p. cm. 10 Feb Dieter K. Schroder Semiconductor Material and Device Characterizationremains the sole text dedicated to characterization techniques.

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Updated and revised figures and examples reflecting the most current data and information new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter characterizatino test readers’ understanding of the material In addition, readers will find fully updated and revised sections in each chapter.

Updated and revised figures and examples reflecting the most current data and information. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. You are currently using the site but have requested k.scheoder page in the site. An Instructor’s Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

My library Help Advanced Book Search. References to this book High Temperature Electronics F.

Coverage includes the full semiconfuctor of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Semiconductor Material and Device Characterization.

Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques formeasuring semiconductor materials and devices.

User Review – Flag as inappropriate funcion trabajo pp’2. Readers familiar with the previous two editions will discover athoroughly revised and updated Third Editionincluding:.

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Semiconductor Material and Device Characterization, 3rd Edition

Written by the main authority in the field of semiconductor characterization. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices.

Updated and revised figures and examples reflecting the mostcurrent data and information new references offering access to the latest research anddiscussions in specialized topics New problems and review questions at the end of each chapter totest readers’ understanding of the material In addition, readers will find fully updated and revisedsections in each chapter.

Readers familiar with the previous two editions will discover athoroughly revised and updated Third Editionincluding: The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers.

Schroder No preview available – This Third Edition updates a landmark text with thelatest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization bringsthe text fully up-to-date with the latest developments in the fieldand includes new pedagogical tools to assist readers.

Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remainsessential reading for graduate students as well as forprofessionals working in the field of semiconductor devices andmaterials.

Added to Your Shopping Cart. An Instructor’s Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.

Venezuela Section Snippet view – Chapter 3 Contact Resistance and Schottky Barriers. Selected pages Page 6.

Semiconductor Material and Device Characterization

Semiconductor Material and Device Characterization, 3rd Edition. Coverage includesthe full range of electrical and optical characterization methods,including the more specialized chemical and physical techniques.

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Chapter 12 Reliability and Failure Analysis. Contents Chapter 1 Resistivity. Reliability and Failure Analysis examines failure times anddistribution materiap, and discusses electromigration, hotcarriers, gate oxide integrity, negative bias temperatureinstability, stress-induced leakage current, and electrostaticdischarge.

Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. Plus, two new chapters have been added: Description This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings diter text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers.

Semiconductor Material and Device Characterization

Chapter 11 Chemical and Physical Characterization. Chapter 2 Carrier and Doping Density. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Editionincluding: Request permission to reuse content from this site. Semiconductor material and device characterization Dieter K.

Semiconductor material and device characterization – Dieter K. Schroder – Google Books

The Third Edition of the internationally characterixation Semiconductor Material and Device Characterization bringsthe text fully up-to-date with the latest developments in the fieldand includes new pedagogical tools to assist readers. Appendix 2 Abbreviations and Acronyms.

This chapter also examinesprobe-based measurements, including scanning capacitance, scanningKelvin force, scanning spreading resistance, and ballistic electronemission microscopy. High Temperature Electronics F.